Please use this identifier to cite or link to this item: https://repositorio.ufrn.br/jspui/handle/123456789/28676
Title: Model of electronic states at the Si-Si02 interface
Authors: Carriço, Arthur da Silva
Barrio, R. A.
Elliot, R. J.
Keywords: Model of electronic states
Issue Date: 15-Jul-1986
Publisher: American Physical Society
Citation: CARRIÇO, A. S.; ELLIOTT, R. J.; BARRIO, R. A. Model of electronic states at the Si-SiO2 interface. Physical Review B - Condensed Matter and Materials Physics, v. 34, p. 872-878, 1986. Disponível em: https://journals.aps.org/prb/abstract/10.1103/PhysRevB.34.872 Acesso: 26 mar. 2020.
Portuguese Abstract: The electronic properties of the interface between crystalline Si and its amorphous oxide SiO 2 have been studied within the tight-binding approximation by saturating the dangling bonds in three different surfaces (111), (110), and (100) of a semi-infinite Si crystal with SiO2 Bethe lattices. The localized states due to isolated dangling bonds in the interfaces (Pb centers) are found to be roughly at the same energy, in the Si gap for the (111) and (110) cases, but the (100) interface differs substantially from the other two. It is also found that the value of the site-energy interaction parameter on the Si defect site is important in determining the energy of the defect state.
URI: https://repositorio.ufrn.br/jspui/handle/123456789/28676
ISSN: 2469-9969 (online), 2469-9950 (print)
Appears in Collections:CCET - DFTE - Artigos publicados em periódicos

Files in This Item:
File Description SizeFormat 
ModelOfElectronicStatesAtTheSi-Sio2Interface_1986.pdf655,77 kBAdobe PDFThumbnail
View/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.