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|Title:||Model of electronic states at the Si-Si02 interface|
|Authors:||Carriço, Arthur da Silva|
Barrio, R. A.
Elliot, R. J.
|Keywords:||Model of electronic states|
|Publisher:||American Physical Society|
|Citation:||CARRIÇO, A. S.; ELLIOTT, R. J.; BARRIO, R. A. Model of electronic states at the Si-SiO2 interface. Physical Review B - Condensed Matter and Materials Physics, v. 34, p. 872-878, 1986. Disponível em: https://journals.aps.org/prb/abstract/10.1103/PhysRevB.34.872 Acesso: 26 mar. 2020.|
|Portuguese Abstract:||The electronic properties of the interface between crystalline Si and its amorphous oxide SiO 2 have been studied within the tight-binding approximation by saturating the dangling bonds in three different surfaces (111), (110), and (100) of a semi-infinite Si crystal with SiO2 Bethe lattices. The localized states due to isolated dangling bonds in the interfaces (Pb centers) are found to be roughly at the same energy, in the Si gap for the (111) and (110) cases, but the (100) interface differs substantially from the other two. It is also found that the value of the site-energy interaction parameter on the Si defect site is important in determining the energy of the defect state.|
|ISSN:||2469-9969 (online), 2469-9950 (print)|
|Appears in Collections:||CCET - DFTE - Artigos publicados em periódicos|
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