Modelling the raman spectrum of the amorphous- crystal Si system

Use este identificador para citar ou linkar para este item: https://repositorio.ufrn.br/handle/123456789/28673

Título:	Modelling the raman spectrum of the amorphous- crystal Si system
Autor(es):	Carriço, Artur da Silva Barrio, R. A. Elliot, R. J.
Palavras-chave:	Modelagem do espectro Raman do sistema Si-cristal amorfo
Data do documento:	1986
Editor:	Institute of Physics (the “Institute”) and IOPscience IOP Publishing
Referência:	ELLIOT, R J; BARRIO, R. A.; CARRIÇO, Artur da Silva. Modelling the Raman spectrum of the amorphous-crystal Si system. Journal of Physics C: Solid State Physics, v. 19, n. 8, p. 1113-1122, 1986. Disponível em: http://iopscience.iop.org/article/10.1088/0022-3719/19/8/010/meta Acesso em 26.fev. 2018.
Resumo:	A model to calculate the Raman response of small Si crystallites immersed in an amorphous Si matrix is developed. The structure of the system is modelled by an infinite crystalline slab of varying width, in which the atoms on the (111) surfaces on both sides of the slab are attached to Bethe lattices. The Raman response is obtained from a simple polarisability model using the Green function technique. The results are compared with recent experiments. The model can be used for Si crystallites with free and hydrogenated (111) surfaces.
URI:	https://repositorio.ufrn.br/jspui/handle/123456789/28673
Aparece nas coleções:	CCET - DFTE - Artigos publicados em periódicos

Arquivos associados a este item:

Não existem arquivos associados a este item.