Aguiar, R.Paskocimas, Carlos AlbertoLeite, Edson RobertoSilva, Elson Longo daDelmonte, Maurício Roberto Bomio2021-04-232021-04-232004-04AGUIAR, R.; PASKOCIMAS, C. A.; LEITE, E. R.; LONGO, E.; MAURÍCIO, M. R. D.. Desenvolvimento do pigmento condutor SnO2 -Sb2O3 e sua aplicação em vidrados semicondutores. Cerâmica, [S.L.], v. 50, n. 314, p. 134-137, jun. 2004. Disponível em: http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0366-69132004000200010&lng=pt&tlng=pt. Acesso em: 21 mar. 2021. http://dx.doi.org/10.1590/s0366-69132004000200010.0366-69131678-4553https://repositorio.ufrn.br/handle/123456789/32303Semiconductor glazes are employed on electrical insulators to avoid surface discharge under conditions of intense electric fields, providing better performance in polluted environments. Semiconductor enamels are of great interest for electrical insulator coatings to avoid surface discharges, related to large potential differences. This enhances the performance of the insulator under polluted environments. Glazes used in ceramic industries are not conductive. The addition of conductive oxides to the glaze composition results in a semiconductor enamel. Sb2O3-doped SnO2 was mixed with the enamel in different concentrations. The resulting enamel was applied over green porcelain and fired at 1250 0C. Scanning electron microscopy characterization was performed and it was verified that the pigment concentration on the surface is low and does not affect the electrical conductivity. The pigment concentration on the fracture surface is approximately 35%. The insulator surface presents a high quality visual aspect and low surface roughness. The electrical resistivity is approximately 104 Ohm.m and occurs through the bulk of the glazeAttribution-NonCommercial 3.0 Brazilhttp://creativecommons.org/licenses/by-nc/3.0/br/PigmentoÓxido de estanhoEsmalteSemicondutorIsoladoresarticle10.1590/s0366-69132004000200010