Use este identificador para citar ou linkar para este item: https://repositorio.ufrn.br/handle/123456789/29290
Título: Exchange-biased SiO2/Co/CoO granular multilayers deposited by sequential sputtering
Autor(es): Gomes, Matheus Gamino
Michea, Sebastián
Denardin, Juliano C.
Schelp, Luiz F.
Corrêa, Marcio Assolin
Bohn, Felipe
Dorneles, Lúcio S.
Palavras-chave: Magnetic properties;Exchange bias;Extraordinary Hall effect;Granular multilayers
Data do documento: 1-Out-2017
Editor: Elsevier
Referência: GAMINO, M.; MICHEA, S.; DENARDIN, J.C.; SCHELP, L.F.; CORREA, M.A.; BOHN, F.; DORNELES, L.S.. Exchange-biased SiO2/Co/CoO granular multilayers deposited by sequential sputtering. Journal Of Magnetism And Magnetic Materials, [s.l.], v. 439, p. 6-12, out. 2017. Elsevier. Disponível em: https://www.sciencedirect.com/science/article/pii/S0304885317308089?via%3Dihub. Acesso em: 10 jun. 2020. http://dx.doi.org/10.1016/j.jmmm.2017.04.095.
Resumo: We investigate the magnetic properties in a system engineered to present Co grains laterally surrounded by a CoO matrix. By considering ferromagnetic SiO2/Co/CoO granular multilayers produced by sequential sputtering deposition, we verify that the Co grains present strong interfacial exchange coupling with the CoO matrix, assigned by the exchange bias effect as well as the raise of the Co blocking temperature. Morever, through magnetization and Hall resistivity experiments, we observe that the antiferromagnetic ordering temperature and exchange bias are dependent on the thickness of the antiferromagnetic material, attributed to finite size effects, as well as we find that the Co blocking temperature is raised as the CoO layer becomes thicker. We discuss the experimental results in terms of the growth mode of the layers, morphological properties of the multilayers, and temperature dependence of the magnetic behavior. The results place the sequential sputtering deposition as a promising alternative technique to produce Co/CoO granular multilayers
URI: https://repositorio.ufrn.br/jspui/handle/123456789/29290
ISSN: 0304-8853
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