Domain wall pinning at an interface step defect

dc.contributor.authorCarriço, Artur da Silva
dc.contributor.authorDantas, Ana Lucia
dc.date.accessioned2020-04-06T19:18:48Z
dc.date.available2020-04-06T19:18:48Z
dc.date.issued1999
dc.description.abstractWe study the magnetization of a thin uniaxial ferromagnetic film on a two-sublattice uniaxial antiferromagnetic substrate near an interface step defect. The step defect produces two distinct regions where opposite sublattices of the antiferromagnet adjoin the interface. We show that the proximity interaction with the substrate leads to the formation and pinning of a Neel domain ́ wall centred at the step edge. The equilibrium pattern is obtained using a numerical procedure which allows for rearrangement of the magnetization of the ferromagnet, which adjusts itself under the effect of the interface field. Our results indicate that the wall profile is rather close to a free- wall pattern; however, the proximity interaction may lead to considerable reduction of the domain wall width. We find that the interface coupling controls the magnetization for weak fields applied along the easy axis. In this case the magnetization results from rigid displacement of the wall, favouring the growth of the domain magnetized in the field direction. The wall detaches from the defect, and the magnetization saturates, when the applied-field strength reaches the value of the interface exchange field associated with the proximity interaction. For a weak external field applied perpendicular to the step edge direction, the magnetization is due to the orientation of the domains in the field direction. In this case saturation occurs for much larger applied-field strength.pt_BR
dc.description.resumoWe study the magnetization of a thin uniaxial ferromagnetic film on a two-sublattice uniaxial antiferromagnetic substrate near an interface step defect. The step defect produces two distinct regions where opposite sublattices of the antiferromagnet adjoin the interface. We show that the proximity interaction with the substrate leads to the formation and pinning of a Neel domain ́ wall centred at the step edge. The equilibrium pattern is obtained using a numerical procedure which allows for rearrangement of the magnetization of the ferromagnet, which adjusts itself under the effect of the interface field. Our results indicate that the wall profile is rather close to a free- wall pattern; however, the proximity interaction may lead to considerable reduction of the domain wall width. We find that the interface coupling controls the magnetization for weak fields applied along the easy axis. In this case the magnetization results from rigid displacement of the wall, favouring the growth of the domain magnetized in the field direction. The wall detaches from the defect, and the magnetization saturates, when the applied-field strength reaches the value of the interface exchange field associated with the proximity interaction. For a weak external field applied perpendicular to the step edge direction, the magnetization is due to the orientation of the domains in the field direction. In this case saturation occurs for much larger applied-field strength.pt_BR
dc.identifier.citationCARRIÇO, Artur da Silva; Dantas, Ana Lucia. Journal of Physics. Condensed Matter (Print), v. 11, p. 2707-2717, 1999. ISSN 0953-8984. DOI https://doi.org/10.1088/0953-8984/11/13/008. Disponivel em: https://iopscience.iop.org/article/10.1088/0953-8984/11/13/008. Acesso em: 06 abr 2020.pt_BR
dc.identifier.doihttps://doi.org/10.1088/0953-8984/11/13/008
dc.identifier.issn0953-8984
dc.identifier.urihttps://repositorio.ufrn.br/jspui/handle/123456789/28755
dc.languageenpt_BR
dc.publisherIOP Publishing Ltdapt_BR
dc.subjectDomain wallpt_BR
dc.subjectPinningpt_BR
dc.subjectInterfacept_BR
dc.subjectStep defectpt_BR
dc.titleDomain wall pinning at an interface step defectpt_BR
dc.typearticlept_BR

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