Synthesis of Al-Doped ZnO films assisted with hollow-cathode glow discharge and their characterization

Página do item simplificado Estatísticas
dc.contributor.authorFeitor, Michelle Cequeira
dc.contributor.authorQueiroz, José César Augusto de
dc.contributor.authorNaeem, Muhammad
dc.contributor.authorAzevedo Filho, João Batista
dc.contributor.authorLiborio, Maxwell Santana
dc.contributor.authorSantos, E. J. C.
dc.contributor.authorSousa, R. R. M.
dc.contributor.authorCosta, Thércio Henrique de Carvalho
dc.contributor.authorKhan, Naveed H.
dc.date.accessioned2021-12-16T14:49:59Z
dc.date.available2021-12-16T14:49:59Z
dc.date.issued2021-02-19
dc.description.resumoTransparent conductive oxides, such as aluminum-doped zinc oxide (AZO), are of substantial importance for use in a broad range of applications because of their excellent optical and electrical properties. AZO film can be deposited by using several conventional techniques, although they suffer from limitations such as long deposition time, high cost, and the requirement for complex deposition equipment. Here, we used hollow-cathode glow discharge, which produces a high-density plasma and achieves high deposition efficiency. Remarkably, instead of metallic target materials, we used Al2O3 and ZnO powders filled in the hollow cathode as a target, thus avoiding the need for specifically designed targets in this technique. The films were deposited using mixtures of argon and oxygen at various ratios (0% to 50% oxygen), to improve the film characteristics. The films deposited under all conditions exhibited hexagonal wurtzite ZnO structure, while the grain size increased with increasing oxygen content. The film was thick and porous when using low oxygen content, but became thin and dense with increasing oxygen content. The optical transmittance was found to be strongly dependent on the processing gases used, with the highest transmittance of 84% being attained when using 25% oxygen gas. The bandgap of the films lay between 3.27 eV and 3.33 eV. The highest carrier concentration and mobility were attained when using 25% oxygen, and the Hall resistivity decreased with increasing oxygen content. Besides the excellent transmittance and electrical properties of the deposited films, it is expected that the results of this study will be useful for solar cells and optoelectronic applications due to the relatively low cost of this technique and the lack of specific target requirementspt_BR
dc.identifier.citationQUEIROZ, J.C.A.; NAEEM, M.; A. AZEVEDO FILHO, J.B.; LIBÓRIO, M.S.; SANTOS, E.J.C.; FEITOR, M.C.; SOUSA, R.R.M.; COSTA, T.H.C.; KHAN, K.H.. Synthesis of Al-Doped ZnO Films Assisted with Hollow-Cathode Glow Discharge and Their Characterization. Journal of Electronic Materials, [S.l.], v. 50, n. 5, p. 2687-2698, 19 fev. 2021. Disponível em: https://link.springer.com/article/10.1007%2Fs11664-021-08802-1. Acesso em: 14 abr. 2021. http://dx.doi.org/10.1007/s11664-021-08802-1.pt_BR
dc.identifier.doi10.1007/s11664-021-08802-1
dc.identifier.issn0361-5235
dc.identifier.issn1543-186X
dc.identifier.urihttps://repositorio.ufrn.br/handle/123456789/45394
dc.languageenpt_BR
dc.publisherJournal of Electronic Materialspt_BR
dc.rightsAttribution 3.0 Brazil*
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/br/*
dc.subjectHollow-cathode glow dischargept_BR
dc.subjectAluminum-doped zinc oxidept_BR
dc.subjectTransmittancept_BR
dc.subjectResistivitypt_BR
dc.subjectBandgappt_BR
dc.titleSynthesis of Al-Doped ZnO films assisted with hollow-cathode glow discharge and their characterizationpt_BR
dc.typearticlept_BR

Arquivos

Pacote Original

Agora exibindo 1 - 1 de 1
Nenhuma Miniatura disponível
Nome:
SynthesisOfAl-DopedZn_FEITOR_2021.pdf
Tamanho:
6.1 MB
Formato:
Adobe Portable Document Format
Nenhuma Miniatura disponível
Baixar

Licença do Pacote

Agora exibindo 1 - 1 de 1
Nenhuma Miniatura disponível
Nome:
license.txt
Tamanho:
1.45 KB
Formato:
Item-specific license agreed upon to submission
Nenhuma Miniatura disponível
Baixar

Coleções

CT - DET - Artigos publicados em periódicos
CT - DEM - Artigos publicados em periódicos
Repositório Institucional - UFRN Campus Universitário Lagoa NovaCEP 59078-970 Caixa postal 1524 Natal/RN - BrasilUniversidade Federal do Rio Grande do Norte© Copyright 2025. Todos os direitos reservados.
Contato+55 (84) 3342-2260 - R232Setor de Repositórios Digitaisrepositorio@bczm.ufrn.br
DSpaceIBICT
OasisBR
LAReferencia
Customizado pela CAT - BCZM